 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| UNISONIC TECHNOLOGIES CO., LTD 12N60 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC's proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. Power MOSFET FEATURES * RDS(ON) = 0.7 @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number:12N60L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating 12N60-x-TA3-T 12N60L-x-TA3-T 12N60-x-TF3-T 12N60L-x-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube www.unisonic.com.tw Copyright (c) 2008 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-170.A 12N60 ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified) PARAMETER SYMBOL 12N60-A 12N60-B Power MOSFET RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 1) IAR 12 A Continuous Drain Current ID 12 A Pulsed Drain Current (Note 1) IDM 48 A Single Pulsed (Note 2) EAS 790 mJ Avalanche Energy 24 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC =25 , unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage 12N60-A 12N60-B SYMBOL BVDSS TEST CONDITIONS VGS = 0 V, ID = 250 A MIN TYP MAX UNIT 600 650 10 100 0.7 2.0 0.55 4.0 0.7 V V A nA V/ V pF pF pF ns ns ns ns nC nC nC V A A ns C Drain-Source Leakage Current IDSS VDS = 600 V, VGS = 0 V Gate-Source Leakage Current IGSS VGS = 30 V, VDS = 0 V Breakdown Voltage Temperature BVDSS/ TJ ID = 250 A, Referenced to 25C Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250A Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 6.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, f = 1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 300V, ID = 12A, RG = 25 (Note 4, 5) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 480V,ID= 12A, VGS= 10 V Gate-Source Charge QGS (Note 4, 5) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 12A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 12A, dIF/dt = 100 A/s (Note 4) Reverse Recovery Charge QRR Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 10mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 12A, di/dt 200A/s, VDD BVDSS Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature. 1480 1900 200 270 25 35 30 115 95 85 42 8.6 21 70 240 200 180 54 1.4 12 48 380 3.5 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-170.A 12N60 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-170.A 12N60 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-170.A 12N60 TYPICAL CHARACTERISTICS On-Resign Characteristics VGS 15V 1 10V 10 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V 10 0 Power MOSFET Transfer Characteristics Top: 101 150 25 10 0 55 Notes: 250 s Pulse Test TC=25 10-1 100 101 Drain-Source Voltage, VGS (V) 10-1 2 Notes: 1.VDS=50V 2.250 s Pulse Test 4 6 8 Gate-Source Voltage, VGS (V) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-170.A 12N60 TYPICAL CHARACTERISTICS Power MOSFET Transient Thermal Response Curve JC(t) 100 D=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse Notes: 1.Z jc(t)=2.27 /W Max. 2.Duty Factor,D=t1/t2 3.TJM-TC=PDM*Z JC(t) PDM t T 10-4 10-3 10-2 10-1 Square Wave Pulse Duration, t1 (sec) 100 101 Thermal Response, Z 10 -1 10-2 10-5 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw On-Resistance, RDS(ON) (m Drain Current, ID (A) ) 6 of 6 QW-R502-170.A |
Price & Availability of 12N60
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |